?2004 fairchild semiconductor corporation FMG1G400US60H rev. a igbt FMG1G400US60H FMG1G400US60H molding type module general description fairchild igbt power module provides low conduction and switching losses as well as short circuit ruggedness. it?s designed for the applications such as motor control, uninterrupted power supplies (ups) and general inverters where short-circuit ruggedness is required. features ? short circuit rated time; 10us @ t c =100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce (sat) = 2.1 v @ i c = 400a ? high input impedance ? fast & soft anti-parallel fwd ? ul certified no.e209204 application ? ac & dc motor controls ? general purpose inverters ? robotics ? servo controls ?ups internal circuit diagram c1 e2 e1/c2 g1 e1 package code : 7pm-ia absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature symbol description FMG1G400US60H units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 80 c 400 a i cm (1) pulsed collector current 800 a i f diode continuous forward current @ t c = 80 c 400 a i fm diode maximum forward current 800 a p d maximum power dissipation @ t c = 25 c 1136 w t sc short circuit withstand time @ t c = 100 c10 us t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +125 c v iso isolation voltage @ ac 1minute 2500 v mounting torque power terminal screw : m6 4.0 n.m mounting screw : m6 4.0 n.m
?2004 fairchild semiconductor corporation FMG1G400US60H rev. a FMG1G400US60H electrical characteristics of igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted thermal characteristics symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges gate - emitter leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) gate - emitter threshold voltage i c = 400ma, v ce = v ge 5.0 6.5 8.5 v v ce(sat) collector to emitter saturation voltage i c = 400a , v ge = 15v -- 2.1 2.7 v switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 400a, r g = 2 ? , v ge = 15v, inductive load, t c = 25 c -- 160 -- ns t r rise time -- 220 -- ns t d(off) turn-off delay time -- 230 -- ns t f fall time -- 150 250 ns e on turn-on switching loss -- 9.5 -- mj e off turn-off switching loss -- 21 -- mj t d(on) turn-on delay time v cc = 300 v, i c = 400a, r g = 2 ? , v ge = 15v, inductive load, t c = 125 c -- 320 -- ns t r rise time -- 240 -- ns t d(off) turn-off delay time -- 290 -- ns t f fall time -- 230 -- ns e on turn-on switching loss -- 11 -- mj e off turn-off switching loss -- 26 -- mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c =400a, v ge = 15v -- 1200 -- nc q ge gate-emitter charge -- 310 -- nc q gc gate-collector charge -- 490 -- nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 400a t c = 25 c -- 1.9 2.8 v t c = 100 c -- 1.8 -- t rr diode reverse recovery time i f = 400a di / dt = 800 a/us t c = 25 c -- 90 130 ns t c = 100 c -- 130 -- i rr diode peak reverse recovery current t c = 25 c -- 35 46 a t c = 100 c -- 76 -- q rr diode reverse recovery charge t c = 25 c -- 1580 3000 nc t c = 100 c -- 4940 -- symbol parameter typ. max. units r jc junction-to-case (igbt part, per 1/2 module) -- 0.11 c / w r jc junction-to-case (diode part, per 1/2 module) -- 0.18 c / w r jc case-to-sink (conductive grease applied) 0.03 -- c / w weight weight of module 360 -- g
?2004 fairchild semiconductor corporation FMG1G400US60H rev. a FMG1G400US60H y [ ] _ x w x y x [ x w w x w w w x w w w w { ? { ? ? ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? ? ? ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v cc = 300v, v ge = 15v i c = 400a t c = 25 t c = 125 ------ g g y [ ] _ x w x y x [ x w w x w w w { ? { ? ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? ? ? ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v cc = 300v, v ge = 15v i c = 400a t c = 25 t c = 125 ------ g g y \ \ w ^ \ x w w x y \ x u w x u \ y u w y u \ z u w z u \ [ u w y w w h [ w w h ] w w h j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? g { ? ? ? ? ? ? ? ? ? ? s g { j g [ ] common emitter v ge = 15v w x y z [ w x w w y w w z w w [ w w \ w w ] w w } n l g d g x w } x \ } x y } y w } common emitter t c = 125 j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? w x y z [ w x w w y w w z w w [ w w \ w w ] w w } n l g d g x w } x \ } x y } y w } common emitter t c = 25 j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? x x w w x w w y w w z w w [ w w \ w w ] w w common emitter v ge = 15v t c = 25 t c = 125 j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. typical saturation voltage characteristics fig 5. turn-on characteristics vs. gate resistance fig 6. turn-off characteristics vs. gate resistance fig 4. saturation voltage vs. case temperature at variant current level
?2004 fairchild semiconductor corporation FMG1G400US60H rev. a FMG1G400US60H w x y z [ w y w w [ w w ] w w _ w w common cathode v ge = 0v t c = 25 t c = 125 m ? ? ? ? ? ? g g j ? ? ? ? ? ? s g g p g m g ? h ? m ? ? ? ? ? ? g g } ? ? ? ? ? ? s g g } m g ? } ? w y w w [ w w ] w w _ w w x w w w x y w w w z ] ` x y x \ common emitter i c = 400a v cc = 300v t c = 25 o c n ? ? ? g j ? ? ? ? ? s g x ? g ? ? j ? n ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } n l g ? } ? g g g y _ w z y w z ] w [ w w x x w x w w l ? ? l ? ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? z ? ? ? ? ? ? ? ? g s ? ? ? g ? ? q ? common emitter v ge = 15v, r g = 2 ? t c = 25 t c = 125 ------ g g g g y _ w z y w z ] w [ w w x w w x w w w { ? { ? ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v ge = 15v, r g = 2 ? t c = 25 t c = 125 ------ g g y _ w z y w z ] w [ w w x w w x w w w { ? { ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v ge = 15v, r g = 2 ? t c = 25 t c = 125 ------ g g g y [ ] _ x w x y x [ x w x w w l ? ? l ? ? ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? ? ? ? z ? ? ? ? ? ? ? ? g s ? ? ? g ? ? q ? common emitter v cc = 300v, v ge = 15v i c = 400a t c = 25 t c = 125 ------ g g fig 7. switching loss vs. gate resistance fig 8. turn-on characteristics vs. collector current fig 11. gate charge characteristics fig 12. forward characteristics (diode) fig 9. turn-off characteristics vs. collector current fig 10. switching loss vs. collector current
?2004 fairchild semiconductor corporation FMG1G400US60H rev. a FMG1G400US60H w \ w x w w x \ w y w w y \ w z w w z \ w [ w w [ \ w x w x w w t rr i rr m ? ? ? ? ? ? g g j ? ? ? ? ? ? s g g p m g g ? h ? w ? ? ? g g y ? ? ? ? ? ? g g y ? ? ? ? ? ? ? g g j ? ? ? ? ? ? s g g p g g g ? ? g g ? h ? y ? ? ? ? ? ? g g y ? ? ? ? ? ? ? g g { ? ? ? s g g { g g ? ? g g ? ? x w ? ? ? common cathode di/dt = 800a/ ? t c = 25 t c = 100 g g fig 13. reverse recovery characteristics(diode)
?2004 fairchild semiconductor corporation FMG1G400US60H rev. a FMG1G400US60H dimensions in millimeters package dimension 32.0 0.50 59.8 0.50 8.05 0.50 4- ?6.5 0.30 mounting-hole 15.0 0.60 108.0 0.50 93.0 0.50 25.0 0.50 25.0 0.50 48.5 0.50 62.0 0.60 27.0 0.60 48.0 0.60 3-m6 30.15 -0.60 +0.20 5.95 0.60 22.45 -0.60 +0.20 convex :20~200um name plate 3-22.0 0.50 3-14.0 0.50 2.80 -0.50 *0.5t +0.00 ?1.3 7pm-ia
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